Quantum capacitance in nanoscale device modelling.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
StandardStandard
Quantum capacitance in nanoscale device modelling. / John, D.L.; Castro, L.C.; Pulfrey, D.L.
Yn: Journal of Applied Physics, Cyfrol 96, Rhif 9, 01.11.2004, t. 5180-5184.
Yn: Journal of Applied Physics, Cyfrol 96, Rhif 9, 01.11.2004, t. 5180-5184.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
HarvardHarvard
John, DL, Castro, LC & Pulfrey, DL 2004, 'Quantum capacitance in nanoscale device modelling.', Journal of Applied Physics, cyfrol. 96, rhif 9, tt. 5180-5184. https://doi.org/10.1063/1.1803614
APA
John, D. L., Castro, L. C., & Pulfrey, D. L. (2004). Quantum capacitance in nanoscale device modelling. Journal of Applied Physics, 96(9), 5180-5184. https://doi.org/10.1063/1.1803614
CBE
John DL, Castro LC, Pulfrey DL. 2004. Quantum capacitance in nanoscale device modelling. Journal of Applied Physics. 96(9):5180-5184. https://doi.org/10.1063/1.1803614
MLA
John, D.L., L.C. Castro a D.L. Pulfrey. "Quantum capacitance in nanoscale device modelling.". Journal of Applied Physics. 2004, 96(9). 5180-5184. https://doi.org/10.1063/1.1803614
VancouverVancouver
John DL, Castro LC, Pulfrey DL. Quantum capacitance in nanoscale device modelling. Journal of Applied Physics. 2004 Tach 1;96(9):5180-5184. doi: 10.1063/1.1803614
Author
RIS
TY - JOUR
T1 - Quantum capacitance in nanoscale device modelling.
AU - John, D.L.
AU - Castro, L.C.
AU - Pulfrey, D.L.
PY - 2004/11/1
Y1 - 2004/11/1
U2 - 10.1063/1.1803614
DO - 10.1063/1.1803614
M3 - Article
VL - 96
SP - 5180
EP - 5184
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
ER -