Simulating the Electrical Characteristics of Organic TFTs Prepared by Vacuum Processing
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Yn: Journal of Display Technology, Cyfrol 9, Rhif 11, 01.11.2013, t. 877-882.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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TY - JOUR
T1 - Simulating the Electrical Characteristics of Organic TFTs Prepared by Vacuum Processing
AU - Taylor, D.M.
AU - Williams, A.
AU - Patchett, E.R.
AU - Abbas, G.A.
AU - Ding, Z.
AU - Assender, H.E.
AU - Morrison, J.J.
AU - Yeates, S.G.
PY - 2013/11/1
Y1 - 2013/11/1
N2 - An all-vacuum evaporated approach to the roll-to-roll (R2R) fabrication of organic electronic circuits is being developed for potential applications in, for example, display backplanes and integrated security tagging for packaging. As part of an on-going development process, we are now addressing the question of circuit design and simulation. Here we describe the first step in this process, namely the extraction of parameters from experimentally-obtained output and transfer characteristics of vacuum produced, thin film transistors based on the organic semiconductors pentacene and dinaphtho[2,3-b:2$'$3 $'$-f]thieno[3,2-b]thiophene (DNTT). For this we use Silvaco's Universal Thin Film Transistor (UOTFT) Model $({rm Level}=37)$ so that the extracted parameters may be used directly with Silvaco's Gateway circuit simulation software.
AB - An all-vacuum evaporated approach to the roll-to-roll (R2R) fabrication of organic electronic circuits is being developed for potential applications in, for example, display backplanes and integrated security tagging for packaging. As part of an on-going development process, we are now addressing the question of circuit design and simulation. Here we describe the first step in this process, namely the extraction of parameters from experimentally-obtained output and transfer characteristics of vacuum produced, thin film transistors based on the organic semiconductors pentacene and dinaphtho[2,3-b:2$'$3 $'$-f]thieno[3,2-b]thiophene (DNTT). For this we use Silvaco's Universal Thin Film Transistor (UOTFT) Model $({rm Level}=37)$ so that the extracted parameters may be used directly with Silvaco's Gateway circuit simulation software.
U2 - 10.1109/JDT.2013.2255023
DO - 10.1109/JDT.2013.2255023
M3 - Article
VL - 9
SP - 877
EP - 882
JO - Journal of Display Technology
JF - Journal of Display Technology
SN - 1551-319X
IS - 11
ER -