VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,2019: High performing metal–oxide semiconductor thin-film transistors

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion CynhadleddPennodadolygiad gan gymheiriaid

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VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,2019: High performing metal–oxide semiconductor thin-film transistors. / Kettle, Jeffrey.
VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,. 2019.

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion CynhadleddPennodadolygiad gan gymheiriaid

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APA

Kettle, J. (2019). VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,2019: High performing metal–oxide semiconductor thin-film transistors. Yn VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,

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MLA

Kettle, Jeffrey "VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,2019: High performing metal–oxide semiconductor thin-film transistors". VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,. 2019.

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Author

Kettle, Jeffrey. / VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,2019 : High performing metal–oxide semiconductor thin-film transistors. VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,. 2019.

RIS

TY - CHAP

T1 - VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,2019

T2 - High performing metal–oxide semiconductor thin-film transistors

AU - Kettle, Jeffrey

PY - 2019

Y1 - 2019

M3 - Chapter

BT - VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation,

ER -