Porth Ymchwil

Wafer Bonded Subwavelength Metallo-Dielectric Laser

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

StandardStandard

Wafer Bonded Subwavelength Metallo-Dielectric Laser. / Bondarenko, O.; Simic, A.; Gu, Q. et al.
Yn: IEEE Photonics Journal, Cyfrol 3, Rhif 3, 26.06.2011, t. 608-616.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Bondarenko, O, Simic, A, Gu, Q, Lee, JH, Slutsky, B, Nezhad, MP & Fainman, Y 2011, 'Wafer Bonded Subwavelength Metallo-Dielectric Laser', IEEE Photonics Journal, cyfrol. 3, rhif 3, tt. 608-616. https://doi.org/10.1109/JPHOT.2011.2146763

APA

Bondarenko, O., Simic, A., Gu, Q., Lee, J. H., Slutsky, B., Nezhad, M. P., & Fainman, Y. (2011). Wafer Bonded Subwavelength Metallo-Dielectric Laser. IEEE Photonics Journal, 3(3), 608-616. https://doi.org/10.1109/JPHOT.2011.2146763

CBE

Bondarenko O, Simic A, Gu Q, Lee JH, Slutsky B, Nezhad MP, Fainman Y. 2011. Wafer Bonded Subwavelength Metallo-Dielectric Laser. IEEE Photonics Journal. 3(3):608-616. https://doi.org/10.1109/JPHOT.2011.2146763

MLA

Bondarenko, O. et al. "Wafer Bonded Subwavelength Metallo-Dielectric Laser". IEEE Photonics Journal. 2011, 3(3). 608-616. https://doi.org/10.1109/JPHOT.2011.2146763

VancouverVancouver

Bondarenko O, Simic A, Gu Q, Lee JH, Slutsky B, Nezhad MP et al. Wafer Bonded Subwavelength Metallo-Dielectric Laser. IEEE Photonics Journal. 2011 Meh 26;3(3):608-616. Epub 2011 Meh 1. doi: 10.1109/JPHOT.2011.2146763

Author

Bondarenko, O. ; Simic, A. ; Gu, Q. et al. / Wafer Bonded Subwavelength Metallo-Dielectric Laser. Yn: IEEE Photonics Journal. 2011 ; Cyfrol 3, Rhif 3. tt. 608-616.

RIS

TY - JOUR

T1 - Wafer Bonded Subwavelength Metallo-Dielectric Laser

AU - Bondarenko, O.

AU - Simic, A.

AU - Gu, Q.

AU - Lee, J. H.

AU - Slutsky, B.

AU - Nezhad, M. P.

AU - Fainman, Y.

PY - 2011/6/26

Y1 - 2011/6/26

N2 - Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

AB - Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

U2 - 10.1109/JPHOT.2011.2146763

DO - 10.1109/JPHOT.2011.2146763

M3 - Article

VL - 3

SP - 608

EP - 616

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

SN - 1943-0655

IS - 3

ER -