AC Impedance Studies on Metal/Nanoporous Silicon/p-Silicon Structures

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AC Impedance Studies on Metal/Nanoporous Silicon/p-Silicon Structures. / Mabrook, Mohammed.

In: Journal of Electronic Materials, Vol. 46, No. 4, 04.2017, p. 2106-2111.

Research output: Contribution to journalArticle

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Mabrook, Mohammed. / AC Impedance Studies on Metal/Nanoporous Silicon/p-Silicon Structures. In: Journal of Electronic Materials. 2017 ; Vol. 46, No. 4. pp. 2106-2111.

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TY - JOUR

T1 - AC Impedance Studies on Metal/Nanoporous Silicon/p-Silicon Structures

AU - Mabrook, Mohammed

PY - 2017/4

Y1 - 2017/4

N2 - Alternating current (AC) impedance measurements have been performed on 10- to 15-μm thick porous silicon layers on a (100) p-type silicon (p(+)Si) substrate with the aluminium (Al) top electrode in a sandwich configuration in the range of 20 Hz–1 MHz and in the temperature ranging between 152 K and 292 K. The ac conductivity σac was found to increase with frequency f according to the universal power law: σac=Afs where the exponent s is a frequency and temperature-dependent quantity. A hopping process is found to be dominant at low temperatures and high frequencies, while a thermally activated free band process is responsible for conduction at higher temperatures. Capacitance is found to decrease with frequency but increase with temperature. Frequency dependence of the loss tangent is observed with a temperature-dependent minimum value.

AB - Alternating current (AC) impedance measurements have been performed on 10- to 15-μm thick porous silicon layers on a (100) p-type silicon (p(+)Si) substrate with the aluminium (Al) top electrode in a sandwich configuration in the range of 20 Hz–1 MHz and in the temperature ranging between 152 K and 292 K. The ac conductivity σac was found to increase with frequency f according to the universal power law: σac=Afs where the exponent s is a frequency and temperature-dependent quantity. A hopping process is found to be dominant at low temperatures and high frequencies, while a thermally activated free band process is responsible for conduction at higher temperatures. Capacitance is found to decrease with frequency but increase with temperature. Frequency dependence of the loss tangent is observed with a temperature-dependent minimum value.

U2 - 10.1007/s11664-016-5139-4

DO - 10.1007/s11664-016-5139-4

M3 - Article

VL - 46

SP - 2106

EP - 2111

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -