Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates

Research output: Contribution to conference › Paper

Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates. / Palego, C.; Solazzi, F.; Halder, S. et al.
2010. Paper presented at 11th International Symposium on RF MEMS and RF Microsystems, Otranto, Italy, June 28-30, 2010.

Research output: Contribution to conference › Paper

Palego, C, Solazzi, F, Halder, S, Hwang, J, Farinelli, P, Sorrentino, R, Faes, A, Mulloni, V & Margesin, B 2010, 'Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates', Paper presented at 11th International Symposium on RF MEMS and RF Microsystems, Otranto, Italy, June 28-30, 2010, 3/01/01. https://doi.org/www.memswave2010.unisalento.it/

Palego, C., Solazzi, F., Halder, S., Hwang, J., Farinelli, P., Sorrentino, R., Faes, A., Mulloni, V., & Margesin, B. (2010). Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates. Paper presented at 11th International Symposium on RF MEMS and RF Microsystems, Otranto, Italy, June 28-30, 2010. https://doi.org/www.memswave2010.unisalento.it/

Palego C, Solazzi F, Halder S, Hwang J, Farinelli P, Sorrentino R, Faes A, Mulloni V, Margesin B. 2010. Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates. Paper presented at 11th International Symposium on RF MEMS and RF Microsystems, Otranto, Italy, June 28-30, 2010. https://doi.org/www.memswave2010.unisalento.it/

Palego C, Solazzi F, Halder S, Hwang J, Farinelli P, Sorrentino R et al.. Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates. 2010. Paper presented at 11th International Symposium on RF MEMS and RF Microsystems, Otranto, Italy, June 28-30, 2010. doi: www.memswave2010.unisalento.it/

Palego, C. ; Solazzi, F. ; Halder, S. et al. / Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates. Paper presented at 11th International Symposium on RF MEMS and RF Microsystems, Otranto, Italy, June 28-30, 2010.

TY - CONF

T1 - Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates

AU - Palego, C.

AU - Solazzi, F.

AU - Halder, S.

AU - Hwang, J.

AU - Farinelli, P.

AU - Sorrentino, R.

AU - Faes, A.

AU - Mulloni, V.

AU - Margesin, B.

PY - 2010/6/28

Y1 - 2010/6/28

U2 - www.memswave2010.unisalento.it/

DO - www.memswave2010.unisalento.it/

M3 - Paper

T2 - 11th International Symposium on RF MEMS and RF Microsystems, Otranto, Italy, June 28-30, 2010

Y2 - 3 January 0001

ER -

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