Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors
Research output: Contribution to journal › Article › peer-review
Standard Standard
Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors. / Fakher, S.J.; Hassan, A.K.; Mabrook, M.F.
In: Synthetic Metals, Vol. 191, 12.03.2014, p. 53-58.
In: Synthetic Metals, Vol. 191, 12.03.2014, p. 53-58.
Research output: Contribution to journal › Article › peer-review
HarvardHarvard
Fakher, SJ, Hassan, AK & Mabrook, MF 2014, 'Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors', Synthetic Metals, vol. 191, pp. 53-58. https://doi.org/10.1016/j.synthmet.2014.02.016
APA
Fakher, S. J., Hassan, A. K., & Mabrook, M. F. (2014). Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors. Synthetic Metals, 191, 53-58. https://doi.org/10.1016/j.synthmet.2014.02.016
CBE
Fakher SJ, Hassan AK, Mabrook MF. 2014. Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors. Synthetic Metals. 191:53-58. https://doi.org/10.1016/j.synthmet.2014.02.016
MLA
Fakher, S.J., A.K. Hassan, and M.F. Mabrook. "Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors". Synthetic Metals. 2014, 191. 53-58. https://doi.org/10.1016/j.synthmet.2014.02.016
VancouverVancouver
Fakher SJ, Hassan AK, Mabrook MF. Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors. Synthetic Metals. 2014 Mar 12;191:53-58. doi: 10.1016/j.synthmet.2014.02.016
Author
RIS
TY - JOUR
T1 - Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors
AU - Fakher, S.J.
AU - Hassan, A.K.
AU - Mabrook, M.F.
PY - 2014/3/12
Y1 - 2014/3/12
U2 - 10.1016/j.synthmet.2014.02.016
DO - 10.1016/j.synthmet.2014.02.016
M3 - Article
VL - 191
SP - 53
EP - 58
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
ER -