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Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.

Research output: Contribution to journal › Article › peer-review

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Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure. / Ryabtsev, G.I.; Bezyazychnaya, T.V.; Bogdanovich, M.V. et al.
In: Applied Physics B-Lasers and Optics, Vol. 90, No. 3-4, 01.03.2008, p. 471-476.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Ryabtsev, GI, Bezyazychnaya, TV, Bogdanovich, MV, Parastchuk, VV, Yenzhyieuski, AI, Burov, LI, Gorbatsevich, AS, Ryabtsev, AG, Shchemelev, MA, Bezotosnyi, VV, Shore, KA & Banerjee, S 2008, 'Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.', Applied Physics B-Lasers and Optics, vol. 90, no. 3-4, pp. 471-476. https://doi.org/10.1007/s00340-007-2912-3

APA

Ryabtsev, G. I., Bezyazychnaya, T. V., Bogdanovich, M. V., Parastchuk, V. V., Yenzhyieuski, A. I., Burov, L. I., Gorbatsevich, A. S., Ryabtsev, A. G., Shchemelev, M. A., Bezotosnyi, V. V., Shore, K. A., & Banerjee, S. (2008). Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure. Applied Physics B-Lasers and Optics, 90(3-4), 471-476. https://doi.org/10.1007/s00340-007-2912-3

CBE

Ryabtsev GI, Bezyazychnaya TV, Bogdanovich MV, Parastchuk VV, Yenzhyieuski AI, Burov LI, Gorbatsevich AS, Ryabtsev AG, Shchemelev MA, Bezotosnyi VV, et al. 2008. Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure. Applied Physics B-Lasers and Optics. 90(3-4):471-476. https://doi.org/10.1007/s00340-007-2912-3

MLA

Ryabtsev, G.I. et al. "Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.". Applied Physics B-Lasers and Optics. 2008, 90(3-4). 471-476. https://doi.org/10.1007/s00340-007-2912-3

VancouverVancouver

Ryabtsev GI, Bezyazychnaya TV, Bogdanovich MV, Parastchuk VV, Yenzhyieuski AI, Burov LI et al. Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure. Applied Physics B-Lasers and Optics. 2008 Mar 1;90(3-4):471-476. doi: 10.1007/s00340-007-2912-3

Author

Ryabtsev, G.I. ; Bezyazychnaya, T.V. ; Bogdanovich, M.V. et al. / Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure. In: Applied Physics B-Lasers and Optics. 2008 ; Vol. 90, No. 3-4. pp. 471-476.

RIS

TY - JOUR

T1 - Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.

AU - Ryabtsev, G.I.

AU - Bezyazychnaya, T.V.

AU - Bogdanovich, M.V.

AU - Parastchuk, V.V.

AU - Yenzhyieuski, A.I.

AU - Burov, L.I.

AU - Gorbatsevich, A.S.

AU - Ryabtsev, A.G.

AU - Shchemelev, M.A.

AU - Bezotosnyi, V.V.

AU - Shore, K.A.

AU - Banerjee, S.

PY - 2008/3/1

Y1 - 2008/3/1

U2 - 10.1007/s00340-007-2912-3

DO - 10.1007/s00340-007-2912-3

M3 - Article

VL - 90

SP - 471

EP - 476

JO - Applied Physics B-Lasers and Optics

JF - Applied Physics B-Lasers and Optics

SN - 0946-2171

IS - 3-4

ER -