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Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

Research output: Contribution to journal › Article › peer-review

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Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. / Xie, Enyuan; Stonehouse, Mark; Ferreira, Ricardo et al.
In: IEEE Photonics Journal, Vol. 9, No. 6, 14.11.2017.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Xie, E, Stonehouse, M, Ferreira, R, McKendry, JJD, Herrnsdorf, J, He, X, Rajbhandari, S, Chun, H, Jalajakumari, AVN, Almer, O, Faulkner, G, Watson, IM, Gu, E, Henderson, R, O'Brien, D & Dawson, MD 2017, 'Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes', IEEE Photonics Journal, vol. 9, no. 6. https://doi.org/10.1109/JPHOT.2017.2768478

APA

Xie, E., Stonehouse, M., Ferreira, R., McKendry, J. J. D., Herrnsdorf, J., He, X., Rajbhandari, S., Chun, H., Jalajakumari, A. V. N., Almer, O., Faulkner, G., Watson, I. M., Gu, E., Henderson, R., O'Brien, D., & Dawson, M. D. (2017). Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. IEEE Photonics Journal, 9(6). https://doi.org/10.1109/JPHOT.2017.2768478

CBE

Xie E, Stonehouse M, Ferreira R, McKendry JJD, Herrnsdorf J, He X, Rajbhandari S, Chun H, Jalajakumari AVN, Almer O, et al. 2017. Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. IEEE Photonics Journal. 9(6). https://doi.org/10.1109/JPHOT.2017.2768478

MLA

Xie, Enyuan et al. "Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes". IEEE Photonics Journal. 2017. 9(6). https://doi.org/10.1109/JPHOT.2017.2768478

VancouverVancouver

Xie E, Stonehouse M, Ferreira R, McKendry JJD, Herrnsdorf J, He X et al. Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. IEEE Photonics Journal. 2017 Nov 14;9(6). doi: 10.1109/JPHOT.2017.2768478

Author

Xie, Enyuan ; Stonehouse, Mark ; Ferreira, Ricardo et al. / Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. In: IEEE Photonics Journal. 2017 ; Vol. 9, No. 6.

RIS

TY - JOUR

T1 - Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

AU - Xie, Enyuan

AU - Stonehouse, Mark

AU - Ferreira, Ricardo

AU - McKendry, Jonathan J. D.

AU - Herrnsdorf, Johannes

AU - He, Xiangyu

AU - Rajbhandari, Sujan

AU - Chun, Hyunchae

AU - Jalajakumari, Aravind V.N.

AU - Almer, Oscar

AU - Faulkner, Grahame

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Henderson, Robert

AU - O'Brien, Dominic

AU - Dawson, Martin D.

PY - 2017/11/14

Y1 - 2017/11/14

N2 - We demonstrate the development, performance, and application of a GaN-basedmicro-light emitting diode (µLED) array sharing a common p-electrode (anode), and with individuallyaddressable n-electrodes (cathodes). Compared to conventional GaN-based LEDarrays, this array design employs a reversed structure of common and individual electrodes,which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS)transistor-based drivers for faster modulation. Excellent performance characteristics are illustratedby an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 indirect-current operation, the optical power and small signal electrical-to-optical modulationbandwidth of a single µLED element with 24 µm diameter are over 2.0 mW and 440 MHz,respectively. The optimized fabrication process also ensures a high yield of working µLEDelements per array and excellent element-to-element uniformity of electrical/optical characteristics.Results on visible light communication are presented as an application of an arrayintegrated with an NMOS driver. Data transmission at several hundred Mb/s without bit erroris achieved for single- and multiple-µLED-element operations, under an ON–OFF-keyingmodulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated toconfirm that the µLED elements can transmit discrete multilevel signals.

AB - We demonstrate the development, performance, and application of a GaN-basedmicro-light emitting diode (µLED) array sharing a common p-electrode (anode), and with individuallyaddressable n-electrodes (cathodes). Compared to conventional GaN-based LEDarrays, this array design employs a reversed structure of common and individual electrodes,which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS)transistor-based drivers for faster modulation. Excellent performance characteristics are illustratedby an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 indirect-current operation, the optical power and small signal electrical-to-optical modulationbandwidth of a single µLED element with 24 µm diameter are over 2.0 mW and 440 MHz,respectively. The optimized fabrication process also ensures a high yield of working µLEDelements per array and excellent element-to-element uniformity of electrical/optical characteristics.Results on visible light communication are presented as an application of an arrayintegrated with an NMOS driver. Data transmission at several hundred Mb/s without bit erroris achieved for single- and multiple-µLED-element operations, under an ON–OFF-keyingmodulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated toconfirm that the µLED elements can transmit discrete multilevel signals.

U2 - 10.1109/JPHOT.2017.2768478

DO - 10.1109/JPHOT.2017.2768478

M3 - Article

VL - 9

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

SN - 1943-0655

IS - 6

ER -