TY - JOUR

T1 - Design optimisation of metallic sub-wavelength nanowire lasers

AU - Satter, Z.A.

AU - Shore, K.A.

AU - Wang, Z.

PY - 2014/4/10

Y1 - 2014/4/10

N2 - Design optimisation of metal-clad cylindrical nanowire semiconductor lasers is undertaken. Attention is focused on structures having GaN as the material platform and utilising silver for the metal cladding. The lasing characteristics of such structures are explored using both the transfer matrix method and the finite element method for operating wavelengths from 330 to 830 nm and for metal cladding thicknesses in the range of 5??20 nm. Specifically, calculations are performed for the modal confinement factor, modal gain and device length across this wide parameter space. For representative structures, it is shown that lower-order TE and TM mode lasing can be supported in devices having cavity lengths of the order of 2 and 18 μm, respectively.

AB - Design optimisation of metal-clad cylindrical nanowire semiconductor lasers is undertaken. Attention is focused on structures having GaN as the material platform and utilising silver for the metal cladding. The lasing characteristics of such structures are explored using both the transfer matrix method and the finite element method for operating wavelengths from 330 to 830 nm and for metal cladding thicknesses in the range of 5??20 nm. Specifically, calculations are performed for the modal confinement factor, modal gain and device length across this wide parameter space. For representative structures, it is shown that lower-order TE and TM mode lasing can be supported in devices having cavity lengths of the order of 2 and 18 μm, respectively.

U2 - 10.1049/iet-opt.2013.0059

DO - 10.1049/iet-opt.2013.0059

M3 - Article

VL - 8

SP - 129

EP - 136

JO - IET Optoelectronics

JF - IET Optoelectronics

SN - 1751-8768

IS - 2

ER -