Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures
Research output: Contribution to conference › Paper
Standard Standard
Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures. / Torres, I.; Taylor, D.M.
2003. Paper presented at European Conference on Molecular Electronics, Avignon.
2003. Paper presented at European Conference on Molecular Electronics, Avignon.
Research output: Contribution to conference › Paper
HarvardHarvard
Torres, I & Taylor, DM 2003, 'Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures', Paper presented at European Conference on Molecular Electronics, Avignon, 3/01/01.
APA
Torres, I., & Taylor, D. M. (2003). Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures. Paper presented at European Conference on Molecular Electronics, Avignon.
CBE
Torres I, Taylor DM. 2003. Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures. Paper presented at European Conference on Molecular Electronics, Avignon.
MLA
Torres, I. and D.M. Taylor Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures. European Conference on Molecular Electronics, Avignon, 03 Jan 0001, Paper, 2003.
VancouverVancouver
Torres I, Taylor DM. Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures. 2003. Paper presented at European Conference on Molecular Electronics, Avignon.
Author
RIS
TY - CONF
T1 - Effect of the metal-semiconducting polymer contact on the electrical behaviour of metal-polyimide-semiconductor-metal structures
AU - Torres, I.
AU - Taylor, D.M.
PY - 2003/9/1
Y1 - 2003/9/1
M3 - Paper
T2 - European Conference on Molecular Electronics, Avignon
Y2 - 3 January 0001
ER -