Electro-thermal analysis of RF MEM capacitive switches for high-power applications
Research output: Contribution to conference › Paper
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2010. 468-471 Paper presented at Proceedings of the EuropeanSolid-State Device Research Conference (ESSDERC), Sevilla, 2010.
Research output: Contribution to conference › Paper
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T1 - Electro-thermal analysis of RF MEM capacitive switches for high-power applications
AU - Solazzi, F.
AU - Palego, C.
AU - Halder, S.
AU - Hwang, J.
AU - Faes, A.
AU - Mulloni, V.
AU - Margesin, B.
AU - Farinelli, P.
AU - Sorrentino, R.
PY - 2010/9/14
Y1 - 2010/9/14
N2 - Self heating in electrostatically actuated RF MEM capacitive shunt switches is analyzed by coupled electrical and thermal simulations using three-dimensional finite-element analysis. The result shows that despite highly nonuniform current and temperature distributions, the self-heating effect can be approximated by lumped thermal resistances of the switch membrane and the substrate. Additionally, since the thermal resistance of thermally insulating substrates such as quartz is significant compared to that of the membrane, it is important to consider the heat transfer across both the membrane and the substrate.
AB - Self heating in electrostatically actuated RF MEM capacitive shunt switches is analyzed by coupled electrical and thermal simulations using three-dimensional finite-element analysis. The result shows that despite highly nonuniform current and temperature distributions, the self-heating effect can be approximated by lumped thermal resistances of the switch membrane and the substrate. Additionally, since the thermal resistance of thermally insulating substrates such as quartz is significant compared to that of the membrane, it is important to consider the heat transfer across both the membrane and the substrate.
U2 - 10.1109/ESSDERC.2010.5618174
DO - 10.1109/ESSDERC.2010.5618174
M3 - Paper
SP - 468
EP - 471
T2 - Proceedings of the EuropeanSolid-State Device Research Conference (ESSDERC), Sevilla, 2010
Y2 - 3 January 0001
ER -