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Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates

Research output: Contribution to journal › Article › peer-review

Standard Standard

Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates. / Lucas, F.O.; O'Reilly, L.; Natarajan, G. et al.
In: Journal of Crystal Growth, Vol. 287, No. 1, 18.01.2006, p. 112-117.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Lucas, FO, O'Reilly, L, Natarajan, G, McNally, PJ, Daniels, S, Taylor, DM, William, S, Cameron, DC, Bradley, AL & Miltra, A 2006, 'Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates', Journal of Crystal Growth, vol. 287, no. 1, pp. 112-117. https://doi.org/10.1016/j.jcrysgro.2005.10.053

APA

Lucas, F. O., O'Reilly, L., Natarajan, G., McNally, P. J., Daniels, S., Taylor, D. M., William, S., Cameron, D. C., Bradley, A. L., & Miltra, A. (2006). Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates. Journal of Crystal Growth, 287(1), 112-117. https://doi.org/10.1016/j.jcrysgro.2005.10.053

CBE

Lucas FO, O'Reilly L, Natarajan G, McNally PJ, Daniels S, Taylor DM, William S, Cameron DC, Bradley AL, Miltra A. 2006. Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates. Journal of Crystal Growth. 287(1):112-117. https://doi.org/10.1016/j.jcrysgro.2005.10.053

MLA

Lucas, F.O. et al. "Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates". Journal of Crystal Growth. 2006, 287(1). 112-117. https://doi.org/10.1016/j.jcrysgro.2005.10.053

VancouverVancouver

Lucas FO, O'Reilly L, Natarajan G, McNally PJ, Daniels S, Taylor DM et al. Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates. Journal of Crystal Growth. 2006 Jan 18;287(1):112-117. doi: 10.1016/j.jcrysgro.2005.10.053

Author

Lucas, F.O. ; O'Reilly, L. ; Natarajan, G. et al. / Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates. In: Journal of Crystal Growth. 2006 ; Vol. 287, No. 1. pp. 112-117.

RIS

TY - JOUR

T1 - Encapsulation of the heteroepitaxial growth of wide band gap gamma-CuCl on silicon substrates

AU - Lucas, F.O.

AU - O'Reilly, L.

AU - Natarajan, G.

AU - McNally, P.J.

AU - Daniels, S.

AU - Taylor, D.M.

AU - William, S.

AU - Cameron, D.C.

AU - Bradley, A.L.

AU - Miltra, A.

PY - 2006/1/18

Y1 - 2006/1/18

U2 - 10.1016/j.jcrysgro.2005.10.053

DO - 10.1016/j.jcrysgro.2005.10.053

M3 - Article

VL - 287

SP - 112

EP - 117

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -