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Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers

Research output: Contribution to journal › Article › peer-review

Standard Standard

Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers. / Kettle, J.P.; Kettle, J.; Chang, S.W. et al.
In: Microelectronic Engineering, Vol. 146, 31.05.2015, p. 105-108.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Kettle, JP, Kettle, J, Chang, SW & Horie, M 2015, 'Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers', Microelectronic Engineering, vol. 146, pp. 105-108. https://doi.org/10.1016/j.mee.2015.05.006

APA

Kettle, J. P., Kettle, J., Chang, S. W., & Horie, M. (2015). Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers. Microelectronic Engineering, 146, 105-108. https://doi.org/10.1016/j.mee.2015.05.006

CBE

Kettle JP, Kettle J, Chang SW, Horie M. 2015. Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers. Microelectronic Engineering. 146:105-108. https://doi.org/10.1016/j.mee.2015.05.006

MLA

Kettle, J.P. et al. "Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers". Microelectronic Engineering. 2015, 146. 105-108. https://doi.org/10.1016/j.mee.2015.05.006

VancouverVancouver

Kettle JP, Kettle J, Chang SW, Horie M. Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers. Microelectronic Engineering. 2015 May 31;146:105-108. doi: 10.1016/j.mee.2015.05.006

Author

Kettle, J.P. ; Kettle, J. ; Chang, S.W. et al. / Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers. In: Microelectronic Engineering. 2015 ; Vol. 146. pp. 105-108.

RIS

TY - JOUR

T1 - Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers

AU - Kettle, J.P.

AU - Kettle, J.

AU - Chang, S.W.

AU - Horie, M.

PY - 2015/5/31

Y1 - 2015/5/31

U2 - 10.1016/j.mee.2015.05.006

DO - 10.1016/j.mee.2015.05.006

M3 - Article

VL - 146

SP - 105

EP - 108

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -