Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.

Research output: Contribution to journal › Article › peer-review

Electronic versions

DOI

https://doi.org/10.1063/1.3223606
Final published version

Keywords

PHYSICS, APPLIED

Original language	English
Pages (from-to)	093309
Journal	Applied Physics Letters
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.3223606
Publication status	Published - 31 Aug 2009

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