Gain calculations for unipolar near infrared intersubband semiconductor laser.

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Gain calculations for unipolar near infrared intersubband semiconductor laser. / Banerjee, S.; Barlow, G.F.; Shore, K.A.
In: IEE Proceedings: Optoelectronics, Vol. 149, No. 2, 01.04.2002, p. 70-43.

Research output: Contribution to journalArticlepeer-review

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Banerjee, S, Barlow, GF & Shore, KA 2002, 'Gain calculations for unipolar near infrared intersubband semiconductor laser.', IEE Proceedings: Optoelectronics, vol. 149, no. 2, pp. 70-43. https://doi.org/10.1049/ip-opt:20020436

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Banerjee S, Barlow GF, Shore KA. Gain calculations for unipolar near infrared intersubband semiconductor laser. IEE Proceedings: Optoelectronics. 2002 Apr 1;149(2):70-43. doi: 10.1049/ip-opt:20020436

Author

Banerjee, S. ; Barlow, G.F. ; Shore, K.A. / Gain calculations for unipolar near infrared intersubband semiconductor laser. In: IEE Proceedings: Optoelectronics. 2002 ; Vol. 149, No. 2. pp. 70-43.

RIS

TY - JOUR

T1 - Gain calculations for unipolar near infrared intersubband semiconductor laser.

AU - Banerjee, S.

AU - Barlow, G.F.

AU - Shore, K.A.

PY - 2002/4/1

Y1 - 2002/4/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

KW - OPTICS

KW - TELECOMMUNICATIONS

U2 - 10.1049/ip-opt:20020436

DO - 10.1049/ip-opt:20020436

M3 - Article

VL - 149

SP - 70

EP - 43

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

SN - 1350-2433

IS - 2

ER -