Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric

Research output: Contribution to journalArticlepeer-review

Standard Standard

Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric. / Campo, E.; Williams, A.D.; Ouchen, F. et al.
In: Journal of Electronic Materials, Vol. 44, No. 10, 19.05.2015, p. 3481-3485.

Research output: Contribution to journalArticlepeer-review

HarvardHarvard

Campo, E, Williams, AD, Ouchen, F, Kim, SS, Ngo, YH, Elhamri, S, Siwecki, A, Mou, S, Campo, EM, Kozlowski, G, Naik, RR & Grote, J 2015, 'Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric', Journal of Electronic Materials, vol. 44, no. 10, pp. 3481-3485. https://doi.org/10.1007/s11664-015-3797-2

APA

Campo, E., Williams, A. D., Ouchen, F., Kim, S. S., Ngo, Y. H., Elhamri, S., Siwecki, A., Mou, S., Campo, E. M., Kozlowski, G., Naik, R. R., & Grote, J. (2015). Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric. Journal of Electronic Materials, 44(10), 3481-3485. https://doi.org/10.1007/s11664-015-3797-2

CBE

Campo E, Williams AD, Ouchen F, Kim SS, Ngo YH, Elhamri S, Siwecki A, Mou S, Campo EM, Kozlowski G, et al. 2015. Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric. Journal of Electronic Materials. 44(10):3481-3485. https://doi.org/10.1007/s11664-015-3797-2

MLA

VancouverVancouver

Campo E, Williams AD, Ouchen F, Kim SS, Ngo YH, Elhamri S et al. Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric. Journal of Electronic Materials. 2015 May 19;44(10):3481-3485. doi: 10.1007/s11664-015-3797-2

Author

Campo, E. ; Williams, A.D. ; Ouchen, F. et al. / Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric. In: Journal of Electronic Materials. 2015 ; Vol. 44, No. 10. pp. 3481-3485.

RIS

TY - JOUR

T1 - Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric

AU - Campo, E.

AU - Williams, A.D.

AU - Ouchen, F.

AU - Kim, S.S.

AU - Ngo, Y.H.

AU - Elhamri, S.

AU - Siwecki, A.

AU - Mou, S.

AU - Campo, E.M.

AU - Kozlowski, G.

AU - Naik, R.R.

AU - Grote, J.

PY - 2015/5/19

Y1 - 2015/5/19

N2 - Guanine and poly(methyl methacrylate) (PMMA) layers 60 nm thick were fabricated by physical vapor deposition and spin-coating, respectively, for potential application as bio-based field-effect transistors. A few layers of graphene on a variety of non-flexible and flexible supports were used as substrates for the guanine and PMMA layers. The interactions between these layers and graphene were studied and their effects on the electrical properties of the graphene were monitored over an extended period of time. Guanine had no noticeable effects on the transport properties of graphene. The presence of PMMA reduced the charge-carrier mobility of graphene by up to 42%. This combination has potential for use as a device in biosensors, environmental science, computer-processing, and graphene-based electronics.

AB - Guanine and poly(methyl methacrylate) (PMMA) layers 60 nm thick were fabricated by physical vapor deposition and spin-coating, respectively, for potential application as bio-based field-effect transistors. A few layers of graphene on a variety of non-flexible and flexible supports were used as substrates for the guanine and PMMA layers. The interactions between these layers and graphene were studied and their effects on the electrical properties of the graphene were monitored over an extended period of time. Guanine had no noticeable effects on the transport properties of graphene. The presence of PMMA reduced the charge-carrier mobility of graphene by up to 42%. This combination has potential for use as a device in biosensors, environmental science, computer-processing, and graphene-based electronics.

U2 - 10.1007/s11664-015-3797-2

DO - 10.1007/s11664-015-3797-2

M3 - Article

VL - 44

SP - 3481

EP - 3485

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 10

ER -