Standard Standard

Growth of nanocrystalline thin films of metal sulfides [CdS, ZnS, CuS and PbS] at the water–oil interface. / Prabhakar, J.T.; Thomas, P.J.; Stansfield, G.L. et al.
In: RSC Advances, No. 76, 15.07.2015, p. 62291-62299.

Research output: Contribution to journalArticlepeer-review

HarvardHarvard

Prabhakar, JT, Thomas, PJ, Stansfield, GL, Komba, N, Cant, DJ, Ramasamy, K, Albrasi, E, Al-Chaghouri, H, Syres, KL, O'Brien, P, Flavell, WR, Mubofu, E, Bondino, F & Magnano, E 2015, 'Growth of nanocrystalline thin films of metal sulfides [CdS, ZnS, CuS and PbS] at the water–oil interface', RSC Advances, no. 76, pp. 62291-62299. https://doi.org/10.1039/C5RA09417H

APA

Prabhakar, J. T., Thomas, P. J., Stansfield, G. L., Komba, N., Cant, D. J., Ramasamy, K., Albrasi, E., Al-Chaghouri, H., Syres, K. L., O'Brien, P., Flavell, W. R., Mubofu, E., Bondino, F., & Magnano, E. (2015). Growth of nanocrystalline thin films of metal sulfides [CdS, ZnS, CuS and PbS] at the water–oil interface. RSC Advances, (76), 62291-62299. https://doi.org/10.1039/C5RA09417H

CBE

Prabhakar JT, Thomas PJ, Stansfield GL, Komba N, Cant DJ, Ramasamy K, Albrasi E, Al-Chaghouri H, Syres KL, O'Brien P, et al. 2015. Growth of nanocrystalline thin films of metal sulfides [CdS, ZnS, CuS and PbS] at the water–oil interface. RSC Advances. (76):62291-62299. https://doi.org/10.1039/C5RA09417H

MLA

VancouverVancouver

Prabhakar JT, Thomas PJ, Stansfield GL, Komba N, Cant DJ, Ramasamy K et al. Growth of nanocrystalline thin films of metal sulfides [CdS, ZnS, CuS and PbS] at the water–oil interface. RSC Advances. 2015 Jul 15;(76):62291-62299. doi: 10.1039/C5RA09417H

Author

Prabhakar, J.T. ; Thomas, P.J. ; Stansfield, G.L. et al. / Growth of nanocrystalline thin films of metal sulfides [CdS, ZnS, CuS and PbS] at the water–oil interface. In: RSC Advances. 2015 ; No. 76. pp. 62291-62299.

RIS

TY - JOUR

T1 - Growth of nanocrystalline thin films of metal sulfides [CdS, ZnS, CuS and PbS] at the water–oil interface

AU - Prabhakar, J.T.

AU - Thomas, P.J.

AU - Stansfield, G.L.

AU - Komba, N.

AU - Cant, D.J.

AU - Ramasamy, K.

AU - Albrasi, E.

AU - Al-Chaghouri, H.

AU - Syres, K.L.

AU - O'Brien, P.

AU - Flavell, W.R.

AU - Mubofu, E.

AU - Bondino, F.

AU - Magnano, E.

PY - 2015/7/15

Y1 - 2015/7/15

N2 - Simple one pot reactions between thiobiuret complexes [M(SON(CNiPr2)2)2], (M = Cd, Zn, Pb or Cu) in toluene and aqueous Na2S lead to well-defined assemblies of nanocrystals. High quality thin films of CdS, ZnS, CuS and PbS nanoparticulates adhered to the interface are produced and are transferable to glass and other substrates. The effect of reaction parameters on the nature and properties of the deposits are examined. The films are characterized by high-resolution transmission electron microscopy, X-ray diffraction, scanning electron microscopy, transport property measurements, X-ray photoelectron and absorption spectroscopy. The ability to obtain thin films of several nanocrystalline semiconductors from a single precursor set significantly expands the scope of a reaction scheme that is still in its infancy.

AB - Simple one pot reactions between thiobiuret complexes [M(SON(CNiPr2)2)2], (M = Cd, Zn, Pb or Cu) in toluene and aqueous Na2S lead to well-defined assemblies of nanocrystals. High quality thin films of CdS, ZnS, CuS and PbS nanoparticulates adhered to the interface are produced and are transferable to glass and other substrates. The effect of reaction parameters on the nature and properties of the deposits are examined. The films are characterized by high-resolution transmission electron microscopy, X-ray diffraction, scanning electron microscopy, transport property measurements, X-ray photoelectron and absorption spectroscopy. The ability to obtain thin films of several nanocrystalline semiconductors from a single precursor set significantly expands the scope of a reaction scheme that is still in its infancy.

U2 - 10.1039/C5RA09417H

DO - 10.1039/C5RA09417H

M3 - Article

SP - 62291

EP - 62299

JO - RSC Advances

JF - RSC Advances

SN - 2046-2069

IS - 76

ER -