Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor

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Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor. / Lamb, D.A.; Irvine, S.J.
In: Journal of Crystal Growth, Vol. 273, No. 1-2, 17.12.2004, p. 111-117.

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Lamb DA, Irvine SJ. Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor. Journal of Crystal Growth. 2004 Dec 17;273(1-2):111-117. doi: 10.1016/j.jcrysgro.2004.08.027

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Lamb, D.A. ; Irvine, S.J. / Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor. In: Journal of Crystal Growth. 2004 ; Vol. 273, No. 1-2. pp. 111-117.

RIS

TY - JOUR

T1 - Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor

AU - Lamb, D.A.

AU - Irvine, S.J.

PY - 2004/12/17

Y1 - 2004/12/17

KW - CRYSTALLOGRAPHY

U2 - 10.1016/j.jcrysgro.2004.08.027

DO - 10.1016/j.jcrysgro.2004.08.027

M3 - Article

VL - 273

SP - 111

EP - 117

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -