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High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Research output: Contribution to journal › Article › peer-review

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High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications. / Ferreira, R. X. G.; Xie, E.; McKendry, J. J. D. et al.
In: IEEE Photonics Technology Letters, Vol. 28, No. 19, 01.10.2016, p. 2023-2026.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Ferreira, RXG, Xie, E, McKendry, JJD, Rajbhandari, S, Chun, H, Faulkner, G, Watson, S, Kelly, AE, Gu, E, Penty, RV, White, IH, O’Brien, DC & Dawson, MD 2016, 'High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications', IEEE Photonics Technology Letters, vol. 28, no. 19, pp. 2023-2026. https://doi.org/10.1109/LPT.2016.2581318

APA

Ferreira, R. X. G., Xie, E., McKendry, J. J. D., Rajbhandari, S., Chun, H., Faulkner, G., Watson, S., Kelly, A. E., Gu, E., Penty, R. V., White, I. H., O’Brien, D. C., & Dawson, M. D. (2016). High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications. IEEE Photonics Technology Letters, 28(19), 2023-2026. https://doi.org/10.1109/LPT.2016.2581318

CBE

Ferreira RXG, Xie E, McKendry JJD, Rajbhandari S, Chun H, Faulkner G, Watson S, Kelly AE, Gu E, Penty RV, et al. 2016. High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications. IEEE Photonics Technology Letters. 28(19):2023-2026. https://doi.org/10.1109/LPT.2016.2581318

MLA

Ferreira, R. X. G. et al. "High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications". IEEE Photonics Technology Letters. 2016, 28(19). 2023-2026. https://doi.org/10.1109/LPT.2016.2581318

VancouverVancouver

Ferreira RXG, Xie E, McKendry JJD, Rajbhandari S, Chun H, Faulkner G et al. High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications. IEEE Photonics Technology Letters. 2016 Oct 1;28(19):2023-2026. doi: 10.1109/LPT.2016.2581318

Author

Ferreira, R. X. G. ; Xie, E. ; McKendry, J. J. D. et al. / High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications. In: IEEE Photonics Technology Letters. 2016 ; Vol. 28, No. 19. pp. 2023-2026.

RIS

TY - JOUR

T1 - High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

AU - Ferreira, R. X. G.

AU - Xie, E.

AU - McKendry, J. J. D.

AU - Rajbhandari, Sujan

AU - Chun, H.

AU - Faulkner, G.

AU - Watson, S.

AU - Kelly, A. E.

AU - Gu, E.

AU - Penty, R. V.

AU - White, I. H.

AU - O’Brien, D. C.

AU - Dawson, M. D.

N1 - This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.

AB - Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.

KW - Light emitting diodes

KW - Bandwidth

KW - Modulation

KW - Current density

KW - OFDM

KW - Data communication

KW - Bit error rate

KW - pulse amplitude modulation

KW - amplitude shift keying

KW - free-space optical communication

KW - gallium compounds

KW - III-V semiconductors

KW - integrated optoelectronics

KW - light emitting diodes

KW - OFDM modulation

KW - optical communication equipment

KW - PAM

KW - micro light-emitting diodes

KW - GaN

KW - optical communication

KW - visible-light communication

U2 - 10.1109/LPT.2016.2581318

DO - 10.1109/LPT.2016.2581318

M3 - Article

VL - 28

SP - 2023

EP - 2026

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 19

ER -