High-power high-contrast RF MEMS capacitive switch

Research output: Contribution to conferencePaper

  • F. Solazzi
  • C. Palego
  • D. Molinero
  • P. Farinelli
  • S. Colpo
  • J.C. Hwang
  • B. Margesin
  • R. Sorrentino
This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.
Original languageEnglish
Pages32-35
Publication statusPublished - 29 Oct 2012
Event7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012 -
Duration: 3 Jan 0002 → …

Conference

Conference7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012
Period3/01/02 → …
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