High-power high-contrast RF MEMS capacitive switch
Research output: Contribution to conference › Paper
This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.
Original language | English |
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Pages | 32-35 |
Publication status | Published - 29 Oct 2012 |
Event | 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012 - Duration: 3 Jan 0002 → … |
Conference
Conference | 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012 |
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Period | 3/01/02 → … |