Standard Standard

Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator. / Ding, Z.; Abbas, G.A.; Assender, H.E. et al.
In: Applied Pysics Letters, Vol. 103, 02.12.2013, p. 233301.

Research output: Contribution to journalArticlepeer-review

HarvardHarvard

Ding, Z, Abbas, GA, Assender, HE, Morrison, JJ, Sanchez-Romaguera, V, Yeates, SG & Taylor, DM 2013, 'Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator', Applied Pysics Letters, vol. 103, pp. 233301. https://doi.org/10.1063/1.4839275

APA

Ding, Z., Abbas, G. A., Assender, H. E., Morrison, J. J., Sanchez-Romaguera, V., Yeates, S. G., & Taylor, D. M. (2013). Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator. Applied Pysics Letters, 103, 233301. https://doi.org/10.1063/1.4839275

CBE

Ding Z, Abbas GA, Assender HE, Morrison JJ, Sanchez-Romaguera V, Yeates SG, Taylor DM. 2013. Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator. Applied Pysics Letters. 103:233301. https://doi.org/10.1063/1.4839275

MLA

VancouverVancouver

Ding Z, Abbas GA, Assender HE, Morrison JJ, Sanchez-Romaguera V, Yeates SG et al. Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator. Applied Pysics Letters. 2013 Dec 2;103:233301. doi: 10.1063/1.4839275

Author

Ding, Z. ; Abbas, G.A. ; Assender, H.E. et al. / Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator. In: Applied Pysics Letters. 2013 ; Vol. 103. pp. 233301.

RIS

TY - JOUR

T1 - Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator

AU - Ding, Z.

AU - Abbas, G.A.

AU - Assender, H.E.

AU - Morrison, J.J.

AU - Sanchez-Romaguera, V.

AU - Yeates, S.G.

AU - Taylor, D.M.

PY - 2013/12/2

Y1 - 2013/12/2

U2 - 10.1063/1.4839275

DO - 10.1063/1.4839275

M3 - Article

VL - 103

SP - 233301

JO - Applied Pysics Letters

JF - Applied Pysics Letters

SN - 1077-3118

ER -