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Intelligent CMOS control of RF MEMS capacitive switches

Research output: Contribution to conference › Paper

Standard Standard

Intelligent CMOS control of RF MEMS capacitive switches. / Ding, G.; Wang, W.; Halder, S. et al.
2012. Paper presented at Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012.

Research output: Contribution to conference › Paper

HarvardHarvard

Ding, G, Wang, W, Halder, S, Palego, C, Molinero, D, Hwang, JC & Goldsmith, CL 2012, 'Intelligent CMOS control of RF MEMS capacitive switches', Paper presented at Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012, 3/01/01. https://doi.org/10.1109/MWSYM.2012.6257781

APA

Ding, G., Wang, W., Halder, S., Palego, C., Molinero, D., Hwang, J. C., & Goldsmith, C. L. (2012). Intelligent CMOS control of RF MEMS capacitive switches. Paper presented at Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012. https://doi.org/10.1109/MWSYM.2012.6257781

CBE

Ding G, Wang W, Halder S, Palego C, Molinero D, Hwang JC, Goldsmith CL. 2012. Intelligent CMOS control of RF MEMS capacitive switches. Paper presented at Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012. https://doi.org/10.1109/MWSYM.2012.6257781

MLA

Ding, G. et al. Intelligent CMOS control of RF MEMS capacitive switches. Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012, 03 Jan 0001, Paper, 2012. https://doi.org/10.1109/MWSYM.2012.6257781

VancouverVancouver

Ding G, Wang W, Halder S, Palego C, Molinero D, Hwang JC et al.. Intelligent CMOS control of RF MEMS capacitive switches. 2012. Paper presented at Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012. doi: 10.1109/MWSYM.2012.6257781

Author

Ding, G. ; Wang, W. ; Halder, S. et al. / Intelligent CMOS control of RF MEMS capacitive switches. Paper presented at Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012.

RIS

TY - CONF

T1 - Intelligent CMOS control of RF MEMS capacitive switches

AU - Ding, G.

AU - Wang, W.

AU - Halder, S.

AU - Palego, C.

AU - Molinero, D.

AU - Hwang, J.C.

AU - Goldsmith, C.L.

PY - 2012/6/17

Y1 - 2012/6/17

N2 - A CMOS control circuit capable of closed-loop capacitance sensing and control of RF MEMS switches was designed, fabricated, and tested. The control was based on fine-tuning the magnitude of the bias voltage of the switches according to the difference between sensed and targeted capacitances. Intelligence could be programmed by periodically alternating the sign of the bias voltage when its magnitude to maintain the targeted capacitance drifted significantly due to dielectric charging. Such an intelligent control could also be used to compensate for process variation, ambient temperature change, and RF power loading, which would make RF MEMS capacitive switches not only more reliable, but also more robust.

AB - A CMOS control circuit capable of closed-loop capacitance sensing and control of RF MEMS switches was designed, fabricated, and tested. The control was based on fine-tuning the magnitude of the bias voltage of the switches according to the difference between sensed and targeted capacitances. Intelligence could be programmed by periodically alternating the sign of the bias voltage when its magnitude to maintain the targeted capacitance drifted significantly due to dielectric charging. Such an intelligent control could also be used to compensate for process variation, ambient temperature change, and RF power loading, which would make RF MEMS capacitive switches not only more reliable, but also more robust.

U2 - 10.1109/MWSYM.2012.6257781

DO - 10.1109/MWSYM.2012.6257781

M3 - Paper

T2 - Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012

Y2 - 3 January 0001

ER -