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Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches

Research output: Contribution to journal › Article › peer-review

Standard Standard

Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches. / Molinero, D.; Luo, X.; Shen, C. et al.
In: IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 1, 12.02.2013, p. 310-315.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Molinero, D, Luo, X, Shen, C, Palego, C, Hwang, JC & Goldsmith, CL 2013, 'Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches', IEEE Transactions on Device and Materials Reliability, vol. 13, no. 1, pp. 310-315. https://doi.org/10.1109/TDMR.2013.2246567

APA

Molinero, D., Luo, X., Shen, C., Palego, C., Hwang, J. C., & Goldsmith, C. L. (2013). Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches. IEEE Transactions on Device and Materials Reliability, 13(1), 310-315. https://doi.org/10.1109/TDMR.2013.2246567

CBE

Molinero D, Luo X, Shen C, Palego C, Hwang JC, Goldsmith CL. 2013. Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches. IEEE Transactions on Device and Materials Reliability. 13(1):310-315. https://doi.org/10.1109/TDMR.2013.2246567

MLA

Molinero, D. et al. "Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches". IEEE Transactions on Device and Materials Reliability. 2013, 13(1). 310-315. https://doi.org/10.1109/TDMR.2013.2246567

VancouverVancouver

Molinero D, Luo X, Shen C, Palego C, Hwang JC, Goldsmith CL. Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches. IEEE Transactions on Device and Materials Reliability. 2013 Feb 12;13(1):310-315. doi: 10.1109/TDMR.2013.2246567

Author

Molinero, D. ; Luo, X. ; Shen, C. et al. / Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches. In: IEEE Transactions on Device and Materials Reliability. 2013 ; Vol. 13, No. 1. pp. 310-315.

RIS

TY - JOUR

T1 - Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches

AU - Molinero, D.

AU - Luo, X.

AU - Shen, C.

AU - Palego, C.

AU - Hwang, J.C.

AU - Goldsmith, C.L.

PY - 2013/2/12

Y1 - 2013/2/12

N2 - This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches.

AB - This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches.

U2 - 10.1109/TDMR.2013.2246567

DO - 10.1109/TDMR.2013.2246567

M3 - Article

VL - 13

SP - 310

EP - 315

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 1

ER -