Ozone oxidation methods for aluminum oxide formation: Application to low-voltage organic transistors

Research output: Contribution to journalArticlepeer-review

Standard Standard

Ozone oxidation methods for aluminum oxide formation: Application to low-voltage organic transistors. / Gupta, S.; Hannah, S.; Watson, Colin et al.
In: Organic Electronics, Vol. 21, 06.2015, p. 132-137.

Research output: Contribution to journalArticlepeer-review

HarvardHarvard

Gupta, S, Hannah, S, Watson, C, Šutta, P, Pedersen, RH & Gleskova, H 2015, 'Ozone oxidation methods for aluminum oxide formation: Application to low-voltage organic transistors', Organic Electronics, vol. 21, pp. 132-137. https://doi.org/10.1016/j.orgel.2015.03.007

APA

Gupta, S., Hannah, S., Watson, C., Šutta, P., Pedersen, R. H., & Gleskova, H. (2015). Ozone oxidation methods for aluminum oxide formation: Application to low-voltage organic transistors. Organic Electronics, 21, 132-137. https://doi.org/10.1016/j.orgel.2015.03.007

CBE

MLA

VancouverVancouver

Gupta S, Hannah S, Watson C, Šutta P, Pedersen RH, Gleskova H. Ozone oxidation methods for aluminum oxide formation: Application to low-voltage organic transistors. Organic Electronics. 2015 Jun;21:132-137. Epub 2015 Mar 9. doi: 10.1016/j.orgel.2015.03.007

Author

Gupta, S. ; Hannah, S. ; Watson, Colin et al. / Ozone oxidation methods for aluminum oxide formation : Application to low-voltage organic transistors. In: Organic Electronics. 2015 ; Vol. 21. pp. 132-137.

RIS

TY - JOUR

T1 - Ozone oxidation methods for aluminum oxide formation

T2 - Application to low-voltage organic transistors

AU - Gupta, S.

AU - Hannah, S.

AU - Watson, Colin

AU - Šutta, P.

AU - Pedersen, R.H.

AU - Gleskova, H.

PY - 2015/6

Y1 - 2015/6

U2 - 10.1016/j.orgel.2015.03.007

DO - 10.1016/j.orgel.2015.03.007

M3 - Article

VL - 21

SP - 132

EP - 137

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

ER -