Polythiophene-based field-effect transistors with enhanced air stability.

Research output: Contribution to journalArticlepeer-review

Standard Standard

Polythiophene-based field-effect transistors with enhanced air stability. / Sun, Y.M.; Lu, X.F.; Lin, S.W. et al.
In: Organic Electronics, Vol. 11, No. 2, 01.02.2010, p. 351-355.

Research output: Contribution to journalArticlepeer-review

HarvardHarvard

Sun, YM, Lu, XF, Lin, SW, Kettle, JP, Yeates, SG & Song, AM 2010, 'Polythiophene-based field-effect transistors with enhanced air stability.', Organic Electronics, vol. 11, no. 2, pp. 351-355. https://doi.org/10.1016/j.orgel.2009.10.019

APA

Sun, Y. M., Lu, X. F., Lin, S. W., Kettle, J. P., Yeates, S. G., & Song, A. M. (2010). Polythiophene-based field-effect transistors with enhanced air stability. Organic Electronics, 11(2), 351-355. https://doi.org/10.1016/j.orgel.2009.10.019

CBE

Sun YM, Lu XF, Lin SW, Kettle JP, Yeates SG, Song AM. 2010. Polythiophene-based field-effect transistors with enhanced air stability. Organic Electronics. 11(2):351-355. https://doi.org/10.1016/j.orgel.2009.10.019

MLA

VancouverVancouver

Sun YM, Lu XF, Lin SW, Kettle JP, Yeates SG, Song AM. Polythiophene-based field-effect transistors with enhanced air stability. Organic Electronics. 2010 Feb 1;11(2):351-355. doi: 10.1016/j.orgel.2009.10.019

Author

Sun, Y.M. ; Lu, X.F. ; Lin, S.W. et al. / Polythiophene-based field-effect transistors with enhanced air stability. In: Organic Electronics. 2010 ; Vol. 11, No. 2. pp. 351-355.

RIS

TY - JOUR

T1 - Polythiophene-based field-effect transistors with enhanced air stability.

AU - Sun, Y.M.

AU - Lu, X.F.

AU - Lin, S.W.

AU - Kettle, J.P.

AU - Yeates, S.G.

AU - Song, A.M.

PY - 2010/2/1

Y1 - 2010/2/1

KW - MATERIALS SCIENCE

KW - MULTIDISCIPLINARY

KW - PHYSICS

KW - APPLIED

U2 - 10.1016/j.orgel.2009.10.019

DO - 10.1016/j.orgel.2009.10.019

M3 - Article

VL - 11

SP - 351

EP - 355

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 2

ER -