Third-order nonlinearity in silicon beyond 2350 nm
Research output: Contribution to journal › Article › peer-review
Standard Standard
Third-order nonlinearity in silicon beyond 2350 nm. / Gholami, Faezeh; Zlatanovic, Sanja; Simic, Aleksandar et al.
In: Applied Physics Letters, Vol. 99, No. 8, 22.08.2011.
In: Applied Physics Letters, Vol. 99, No. 8, 22.08.2011.
Research output: Contribution to journal › Article › peer-review
HarvardHarvard
Gholami, F, Zlatanovic, S, Simic, A, Liu, L, Borlaug, D, Alic, N, Nezhad, MP, Fainman, Y & Radic, S 2011, 'Third-order nonlinearity in silicon beyond 2350 nm', Applied Physics Letters, vol. 99, no. 8. https://doi.org/10.1063/1.3630130
APA
Gholami, F., Zlatanovic, S., Simic, A., Liu, L., Borlaug, D., Alic, N., Nezhad, M. P., Fainman, Y., & Radic, S. (2011). Third-order nonlinearity in silicon beyond 2350 nm. Applied Physics Letters, 99(8). https://doi.org/10.1063/1.3630130
CBE
Gholami F, Zlatanovic S, Simic A, Liu L, Borlaug D, Alic N, Nezhad MP, Fainman Y, Radic S. 2011. Third-order nonlinearity in silicon beyond 2350 nm. Applied Physics Letters. 99(8). https://doi.org/10.1063/1.3630130
MLA
Gholami, Faezeh et al. "Third-order nonlinearity in silicon beyond 2350 nm". Applied Physics Letters. 2011. 99(8). https://doi.org/10.1063/1.3630130
VancouverVancouver
Gholami F, Zlatanovic S, Simic A, Liu L, Borlaug D, Alic N et al. Third-order nonlinearity in silicon beyond 2350 nm. Applied Physics Letters. 2011 Aug 22;99(8). doi: 10.1063/1.3630130
Author
RIS
TY - JOUR
T1 - Third-order nonlinearity in silicon beyond 2350 nm
AU - Gholami, Faezeh
AU - Zlatanovic, Sanja
AU - Simic, Aleksandar
AU - Liu, Lan
AU - Borlaug, David
AU - Alic, Nikola
AU - Nezhad, Maziar P.
AU - Fainman, Yeshaiahu
AU - Radic, Stojan
PY - 2011/8/22
Y1 - 2011/8/22
U2 - 10.1063/1.3630130
DO - 10.1063/1.3630130
M3 - Article
VL - 99
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
ER -