Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene). / Taylor, D.M.; Alves, N.
Yn: Applied Physics Letters, Cyfrol 92, Rhif 10, 13.03.2008, t. 103312.
Yn: Applied Physics Letters, Cyfrol 92, Rhif 10, 13.03.2008, t. 103312.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
HarvardHarvard
Taylor, DM & Alves, N 2008, 'Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)', Applied Physics Letters, cyfrol. 92, rhif 10, tt. 103312. https://doi.org/10.1063/1.2897238
APA
Taylor, D. M., & Alves, N. (2008). Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene). Applied Physics Letters, 92(10), 103312. https://doi.org/10.1063/1.2897238
CBE
Taylor DM, Alves N. 2008. Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene). Applied Physics Letters. 92(10):103312. https://doi.org/10.1063/1.2897238
MLA
Taylor, D.M. a N. Alves. "Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)". Applied Physics Letters. 2008, 92(10). 103312. https://doi.org/10.1063/1.2897238
VancouverVancouver
Taylor DM, Alves N. Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene). Applied Physics Letters. 2008 Maw 13;92(10):103312. doi: 10.1063/1.2897238
Author
RIS
TY - JOUR
T1 - Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
AU - Taylor, D.M.
AU - Alves, N.
PY - 2008/3/13
Y1 - 2008/3/13
KW - PHYSICS
KW - APPLIED
U2 - 10.1063/1.2897238
DO - 10.1063/1.2897238
M3 - Article
VL - 92
SP - 103312
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
ER -