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Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene). / Taylor, D.M.; Alves, N.
In: Applied Physics Letters, Vol. 92, No. 10, 13.03.2008, p. 103312.

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Taylor DM, Alves N. Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene). Applied Physics Letters. 2008 Mar 13;92(10):103312. doi: 10.1063/1.2897238

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Taylor, D.M. ; Alves, N. / Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene). In: Applied Physics Letters. 2008 ; Vol. 92, No. 10. pp. 103312.

RIS

TY - JOUR

T1 - Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

AU - Taylor, D.M.

AU - Alves, N.

PY - 2008/3/13

Y1 - 2008/3/13

KW - PHYSICS

KW - APPLIED

U2 - 10.1063/1.2897238

DO - 10.1063/1.2897238

M3 - Article

VL - 92

SP - 103312

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -