Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Yn: Solid-State Electronics Special Issue, Cyfrol 65-66, 12.07.2011, t. 219-225.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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TY - JOUR
T1 - Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches
AU - Solazzi, F.
AU - Palego, C.
AU - Halder, S.
AU - Hwang, J.C.
AU - Faes, A.
AU - Mulloni, V.
AU - Margesin, B.
AU - Farinelli, P.
AU - Sorrentino, R.
PY - 2011/7/12
Y1 - 2011/7/12
N2 - RF power-handling capacity of micro-electromechanical capacitive switches was modeled by multiphysics finite-element analysis. Coupled electromechanical, electrothermal and thermomechanical models were constructed by using commercially available software. Simulations by using the models were validated by small- and large-signal RF measurements. The measurements showed that the power-handling capacity of the switches depended on not only the properties of the membrane (the movable part of the switches), but also the substrate properties and the circuit environment. These effects were captured in a compacted model, which could be used to guide the improvement of the power-handling capacity of the switches.
AB - RF power-handling capacity of micro-electromechanical capacitive switches was modeled by multiphysics finite-element analysis. Coupled electromechanical, electrothermal and thermomechanical models were constructed by using commercially available software. Simulations by using the models were validated by small- and large-signal RF measurements. The measurements showed that the power-handling capacity of the switches depended on not only the properties of the membrane (the movable part of the switches), but also the substrate properties and the circuit environment. These effects were captured in a compacted model, which could be used to guide the improvement of the power-handling capacity of the switches.
U2 - 10.1016/j.sse.2011.06.020
DO - 10.1016/j.sse.2011.06.020
M3 - Article
VL - 65-66
SP - 219
EP - 225
JO - Solid-State Electronics Special Issue
JF - Solid-State Electronics Special Issue
SN - 0038-1101
ER -