Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches

Research output: Contribution to journalArticlepeer-review

Standard Standard

Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches. / Solazzi, F.; Palego, C.; Halder, S. et al.
In: Solid-State Electronics Special Issue, Vol. 65-66, 12.07.2011, p. 219-225.

Research output: Contribution to journalArticlepeer-review

HarvardHarvard

Solazzi, F, Palego, C, Halder, S, Hwang, JC, Faes, A, Mulloni, V, Margesin, B, Farinelli, P & Sorrentino, R 2011, 'Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches', Solid-State Electronics Special Issue, vol. 65-66, pp. 219-225. https://doi.org/10.1016/j.sse.2011.06.020

APA

Solazzi, F., Palego, C., Halder, S., Hwang, J. C., Faes, A., Mulloni, V., Margesin, B., Farinelli, P., & Sorrentino, R. (2011). Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches. Solid-State Electronics Special Issue, 65-66, 219-225. https://doi.org/10.1016/j.sse.2011.06.020

CBE

Solazzi F, Palego C, Halder S, Hwang JC, Faes A, Mulloni V, Margesin B, Farinelli P, Sorrentino R. 2011. Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches. Solid-State Electronics Special Issue. 65-66:219-225. https://doi.org/10.1016/j.sse.2011.06.020

MLA

VancouverVancouver

Solazzi F, Palego C, Halder S, Hwang JC, Faes A, Mulloni V et al. Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches. Solid-State Electronics Special Issue. 2011 Jul 12;65-66:219-225. doi: 10.1016/j.sse.2011.06.020

Author

Solazzi, F. ; Palego, C. ; Halder, S. et al. / Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches. In: Solid-State Electronics Special Issue. 2011 ; Vol. 65-66. pp. 219-225.

RIS

TY - JOUR

T1 - Effect of the substrate on RF power-handling capability of micro-electromechanical capacitive switches

AU - Solazzi, F.

AU - Palego, C.

AU - Halder, S.

AU - Hwang, J.C.

AU - Faes, A.

AU - Mulloni, V.

AU - Margesin, B.

AU - Farinelli, P.

AU - Sorrentino, R.

PY - 2011/7/12

Y1 - 2011/7/12

N2 - RF power-handling capacity of micro-electromechanical capacitive switches was modeled by multiphysics finite-element analysis. Coupled electromechanical, electrothermal and thermomechanical models were constructed by using commercially available software. Simulations by using the models were validated by small- and large-signal RF measurements. The measurements showed that the power-handling capacity of the switches depended on not only the properties of the membrane (the movable part of the switches), but also the substrate properties and the circuit environment. These effects were captured in a compacted model, which could be used to guide the improvement of the power-handling capacity of the switches.

AB - RF power-handling capacity of micro-electromechanical capacitive switches was modeled by multiphysics finite-element analysis. Coupled electromechanical, electrothermal and thermomechanical models were constructed by using commercially available software. Simulations by using the models were validated by small- and large-signal RF measurements. The measurements showed that the power-handling capacity of the switches depended on not only the properties of the membrane (the movable part of the switches), but also the substrate properties and the circuit environment. These effects were captured in a compacted model, which could be used to guide the improvement of the power-handling capacity of the switches.

U2 - 10.1016/j.sse.2011.06.020

DO - 10.1016/j.sse.2011.06.020

M3 - Article

VL - 65-66

SP - 219

EP - 225

JO - Solid-State Electronics Special Issue

JF - Solid-State Electronics Special Issue

SN - 0038-1101

ER -