Enhanced performance of AlOx-based organic thin-film transistors

Allbwn ymchwil: Cyfraniad at gynhadleddPapur

Fersiynau electronig

Dangosydd eitem ddigidol (DOI)

The performance of thin-film transistors based on an aluminum oxide gate dielectric and a pentacene semiconductor have been systematically enhanced by modification of the oxide surface. The oxide layer was formed at room temperature using a standard anodization technique. The effects of surface modification of the oxide layer on device performance have been investigated. Higher mobility transistors were fabricated by passivating the oxide layer with a self-assembled molecular monolayer of an alkyl phosphonic acid or a spin-coated acrylic film. In both cases the normalized sub-threshold swing was reduced by a factor of 1.9 and 1.5, and the maximum charge-carrier mobility was increased by one and two orders of magnitudes respectively. The much increased mobility for transistors modified by a thin film of polymethylmethacrylate (PMMA) is attributed to the larger pentacene grain size.
Iaith wreiddiolSaesneg
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 15 Awst 2011
DigwyddiadNanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011 -
Hyd: 3 Jan 0001 → …


CynhadleddNanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011
Cyfnod3/01/01 → …
Gweld graff cysylltiadau