Porth Ymchwil

Enhanced performance of AlOx-based organic thin-film transistors

Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

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Enhanced performance of AlOx-based organic thin-film transistors. / Ashall, D.T.; Ashall, D.; Fakher, S.J. et al.
2011. 61-66 Papur a gyflwynwyd yn Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011.

Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

HarvardHarvard

Ashall, DT, Ashall, D, Fakher, SJ & Mabrook, MF 2011, 'Enhanced performance of AlOx-based organic thin-film transistors', Papur a gyflwynwyd yn Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011, 3/01/01 tt. 61-66. https://doi.org/10.1109/NANO.2011.6144540

APA

Ashall, D. T., Ashall, D., Fakher, S. J., & Mabrook, M. F. (2011). Enhanced performance of AlOx-based organic thin-film transistors. 61-66. Papur a gyflwynwyd yn Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011. https://doi.org/10.1109/NANO.2011.6144540

CBE

Ashall DT, Ashall D, Fakher SJ, Mabrook MF. 2011. Enhanced performance of AlOx-based organic thin-film transistors. Papur a gyflwynwyd yn Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011. https://doi.org/10.1109/NANO.2011.6144540

MLA

Ashall, D.T. et al. Enhanced performance of AlOx-based organic thin-film transistors. Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011, 03 Ion 0001, Papur, 2011. https://doi.org/10.1109/NANO.2011.6144540

VancouverVancouver

Ashall DT, Ashall D, Fakher SJ, Mabrook MF. Enhanced performance of AlOx-based organic thin-film transistors. 2011. Papur a gyflwynwyd yn Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011. doi: 10.1109/NANO.2011.6144540

Author

Ashall, D.T. ; Ashall, D. ; Fakher, S.J. et al. / Enhanced performance of AlOx-based organic thin-film transistors. Papur a gyflwynwyd yn Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011.

RIS

TY - CONF

T1 - Enhanced performance of AlOx-based organic thin-film transistors

AU - Ashall, D.T.

AU - Ashall, D.

AU - Fakher, S.J.

AU - Mabrook, M.F.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - The performance of thin-film transistors based on an aluminum oxide gate dielectric and a pentacene semiconductor have been systematically enhanced by modification of the oxide surface. The oxide layer was formed at room temperature using a standard anodization technique. The effects of surface modification of the oxide layer on device performance have been investigated. Higher mobility transistors were fabricated by passivating the oxide layer with a self-assembled molecular monolayer of an alkyl phosphonic acid or a spin-coated acrylic film. In both cases the normalized sub-threshold swing was reduced by a factor of 1.9 and 1.5, and the maximum charge-carrier mobility was increased by one and two orders of magnitudes respectively. The much increased mobility for transistors modified by a thin film of polymethylmethacrylate (PMMA) is attributed to the larger pentacene grain size.

AB - The performance of thin-film transistors based on an aluminum oxide gate dielectric and a pentacene semiconductor have been systematically enhanced by modification of the oxide surface. The oxide layer was formed at room temperature using a standard anodization technique. The effects of surface modification of the oxide layer on device performance have been investigated. Higher mobility transistors were fabricated by passivating the oxide layer with a self-assembled molecular monolayer of an alkyl phosphonic acid or a spin-coated acrylic film. In both cases the normalized sub-threshold swing was reduced by a factor of 1.9 and 1.5, and the maximum charge-carrier mobility was increased by one and two orders of magnitudes respectively. The much increased mobility for transistors modified by a thin film of polymethylmethacrylate (PMMA) is attributed to the larger pentacene grain size.

U2 - 10.1109/NANO.2011.6144540

DO - 10.1109/NANO.2011.6144540

M3 - Paper

SP - 61

EP - 66

T2 - Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011

Y2 - 3 January 0001

ER -