Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

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Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. / Kettle, J.P.; Kettle, J.; Perks, R.M. et al.
Yn: Electronics Letters, Cyfrol 45, Rhif 1, 01.01.2009, t. 79-80.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

HarvardHarvard

Kettle, JP, Kettle, J, Perks, RM & Hoyle, RT 2009, 'Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.', Electronics Letters, cyfrol. 45, rhif 1, tt. 79-80. https://doi.org/10.1049/e1:20092309

APA

Kettle, J. P., Kettle, J., Perks, R. M., & Hoyle, R. T. (2009). Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters, 45(1), 79-80. https://doi.org/10.1049/e1:20092309

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MLA

VancouverVancouver

Kettle JP, Kettle J, Perks RM, Hoyle RT. Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters. 2009 Ion 1;45(1):79-80. doi: 10.1049/e1:20092309

Author

Kettle, J.P. ; Kettle, J. ; Perks, R.M. et al. / Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Yn: Electronics Letters. 2009 ; Cyfrol 45, Rhif 1. tt. 79-80.

RIS

TY - JOUR

T1 - Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.

AU - Kettle, J.P.

AU - Kettle, J.

AU - Perks, R.M.

AU - Hoyle, R.T.

PY - 2009/1/1

Y1 - 2009/1/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

U2 - 10.1049/e1:20092309

DO - 10.1049/e1:20092309

M3 - Article

VL - 45

SP - 79

EP - 80

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -