Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.
Research output: Contribution to journal › Article › peer-review
Standard Standard
Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. / Kettle, J.P.; Kettle, J.; Perks, R.M. et al.
In: Electronics Letters, Vol. 45, No. 1, 01.01.2009, p. 79-80.
In: Electronics Letters, Vol. 45, No. 1, 01.01.2009, p. 79-80.
Research output: Contribution to journal › Article › peer-review
HarvardHarvard
Kettle, JP, Kettle, J, Perks, RM & Hoyle, RT 2009, 'Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.', Electronics Letters, vol. 45, no. 1, pp. 79-80. https://doi.org/10.1049/e1:20092309
APA
Kettle, J. P., Kettle, J., Perks, R. M., & Hoyle, R. T. (2009). Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters, 45(1), 79-80. https://doi.org/10.1049/e1:20092309
CBE
Kettle JP, Kettle J, Perks RM, Hoyle RT. 2009. Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters. 45(1):79-80. https://doi.org/10.1049/e1:20092309
MLA
Kettle, J.P. et al. "Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.". Electronics Letters. 2009, 45(1). 79-80. https://doi.org/10.1049/e1:20092309
VancouverVancouver
Kettle JP, Kettle J, Perks RM, Hoyle RT. Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters. 2009 Jan 1;45(1):79-80. doi: 10.1049/e1:20092309
Author
RIS
TY - JOUR
T1 - Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.
AU - Kettle, J.P.
AU - Kettle, J.
AU - Perks, R.M.
AU - Hoyle, R.T.
PY - 2009/1/1
Y1 - 2009/1/1
KW - ENGINEERING
KW - ELECTRICAL & ELECTRONIC
U2 - 10.1049/e1:20092309
DO - 10.1049/e1:20092309
M3 - Article
VL - 45
SP - 79
EP - 80
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 1
ER -