Porth Ymchwil

Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

StandardStandard

Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask. / Pang, L; Nezhad, M; Levy, U et al.
Yn: Applied Optics, Cyfrol 44, Rhif 12, 20.04.2005, t. 2377-2381.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Pang, L, Nezhad, M, Levy, U, Tsai, CH & Fainman, Y 2005, 'Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask', Applied Optics, cyfrol. 44, rhif 12, tt. 2377-2381. https://doi.org/10.1364/AO.44.002377

APA

Pang, L., Nezhad, M., Levy, U., Tsai, CH., & Fainman, Y. (2005). Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask. Applied Optics, 44(12), 2377-2381. https://doi.org/10.1364/AO.44.002377

CBE

Pang L, Nezhad M, Levy U, Tsai CH, Fainman Y. 2005. Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask. Applied Optics. 44(12):2377-2381. https://doi.org/10.1364/AO.44.002377

MLA

Pang, L et al. "Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask". Applied Optics. 2005, 44(12). 2377-2381. https://doi.org/10.1364/AO.44.002377

VancouverVancouver

Pang L, Nezhad M, Levy U, Tsai CH, Fainman Y. Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask. Applied Optics. 2005 Ebr 20;44(12):2377-2381. doi: 10.1364/AO.44.002377

Author

Pang, L ; Nezhad, M ; Levy, U et al. / Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask. Yn: Applied Optics. 2005 ; Cyfrol 44, Rhif 12. tt. 2377-2381.

RIS

TY - JOUR

T1 - Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

AU - Pang, L

AU - Nezhad, M

AU - Levy, U

AU - Tsai, CH

AU - Fainman, Y

PY - 2005/4/20

Y1 - 2005/4/20

N2 - A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-µm wavelength was produced and evaluated.

AB - A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-µm wavelength was produced and evaluated.

U2 - 10.1364/AO.44.002377

DO - 10.1364/AO.44.002377

M3 - Article

VL - 44

SP - 2377

EP - 2381

JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

IS - 12

ER -