Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
Fersiynau electronig
Dangosydd eitem ddigidol (DOI)
A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-µm wavelength was produced and evaluated.
| Iaith wreiddiol | Saesneg |
|---|---|
| Tudalennau (o-i) | 2377-2381 |
| Nifer y tudalennau | 5 |
| Cyfnodolyn | Applied Optics |
| Cyfrol | 44 |
| Rhif y cyfnodolyn | 12 |
| Dynodwyr Gwrthrych Digidol (DOIs) | |
| Statws | Cyhoeddwyd - 20 Ebr 2005 |