Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Yn: IEEE Electron Device Letters, Cyfrol 34, Rhif 2, 14.02.2013, t. 268 - 270.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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T1 - Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors
AU - Abbas, G.
AU - Ding, Z.
AU - Mallik, K.
AU - Assender, H.
AU - Taylor, D.M.
PY - 2013/2/14
Y1 - 2013/2/14
N2 - The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. The method allows a polymerized tripropyleneglycol diacrylate (TPGDA) insulator layer of thickness up to 1 μm to be obtained in a single pass by ultrahigh flash evaporation of a monomer onto a web travelling at 10 m·min-1and subsequent irradiation with an argon plasma emitted from a dc-sputtering cathode. The resulting organic thin-film transistors (OTFTs) exhibited field-effect mobility of 0.12 cm2 V-1·s-1, a threshold voltage of -21 V, a turn-on voltage of -2 V, and an on/off current ratio of 1 × 105. The effect of ambient air moisture on the device characteristics was investigated, showing that moisture has a reversible effect on the performance of the OTFTs exhibiting a shift in the turn-on voltage and deterioration in the on-off ratio. However, the effect was eliminated using a simple conventional encapsulation method. Our vacuum-based process thus demonstrates excellent potential for providing an alternative route to low-cost large-area organic electronics manufacturing.
AB - The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. The method allows a polymerized tripropyleneglycol diacrylate (TPGDA) insulator layer of thickness up to 1 μm to be obtained in a single pass by ultrahigh flash evaporation of a monomer onto a web travelling at 10 m·min-1and subsequent irradiation with an argon plasma emitted from a dc-sputtering cathode. The resulting organic thin-film transistors (OTFTs) exhibited field-effect mobility of 0.12 cm2 V-1·s-1, a threshold voltage of -21 V, a turn-on voltage of -2 V, and an on/off current ratio of 1 × 105. The effect of ambient air moisture on the device characteristics was investigated, showing that moisture has a reversible effect on the performance of the OTFTs exhibiting a shift in the turn-on voltage and deterioration in the on-off ratio. However, the effect was eliminated using a simple conventional encapsulation method. Our vacuum-based process thus demonstrates excellent potential for providing an alternative route to low-cost large-area organic electronics manufacturing.
U2 - 10.1109/LED.2012.2234434
DO - 10.1109/LED.2012.2234434
M3 - Article
VL - 34
SP - 268
EP - 270
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 2
ER -