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Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors

Research output: Contribution to journal › Article › peer-review

Standard Standard

Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors. / Abbas, G.; Ding, Z.; Mallik, K. et al.
In: IEEE Electron Device Letters, Vol. 34, No. 2, 14.02.2013, p. 268 - 270.

Research output: Contribution to journal › Article › peer-review

HarvardHarvard

Abbas, G, Ding, Z, Mallik, K, Assender, H & Taylor, DM 2013, 'Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors', IEEE Electron Device Letters, vol. 34, no. 2, pp. 268 - 270. https://doi.org/10.1109/LED.2012.2234434

APA

Abbas, G., Ding, Z., Mallik, K., Assender, H., & Taylor, D. M. (2013). Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors. IEEE Electron Device Letters, 34(2), 268 - 270. https://doi.org/10.1109/LED.2012.2234434

CBE

Abbas G, Ding Z, Mallik K, Assender H, Taylor DM. 2013. Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors. IEEE Electron Device Letters. 34(2):268 - 270. https://doi.org/10.1109/LED.2012.2234434

MLA

Abbas, G. et al. "Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors". IEEE Electron Device Letters. 2013, 34(2). 268 - 270. https://doi.org/10.1109/LED.2012.2234434

VancouverVancouver

Abbas G, Ding Z, Mallik K, Assender H, Taylor DM. Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors. IEEE Electron Device Letters. 2013 Feb 14;34(2):268 - 270. doi: 10.1109/LED.2012.2234434

Author

Abbas, G. ; Ding, Z. ; Mallik, K. et al. / Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 2. pp. 268 - 270.

RIS

TY - JOUR

T1 - Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors

AU - Abbas, G.

AU - Ding, Z.

AU - Mallik, K.

AU - Assender, H.

AU - Taylor, D.M.

PY - 2013/2/14

Y1 - 2013/2/14

N2 - The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. The method allows a polymerized tripropyleneglycol diacrylate (TPGDA) insulator layer of thickness up to 1 μm to be obtained in a single pass by ultrahigh flash evaporation of a monomer onto a web travelling at 10 m·min-1and subsequent irradiation with an argon plasma emitted from a dc-sputtering cathode. The resulting organic thin-film transistors (OTFTs) exhibited field-effect mobility of 0.12 cm2 V-1·s-1, a threshold voltage of -21 V, a turn-on voltage of -2 V, and an on/off current ratio of 1 × 105. The effect of ambient air moisture on the device characteristics was investigated, showing that moisture has a reversible effect on the performance of the OTFTs exhibiting a shift in the turn-on voltage and deterioration in the on-off ratio. However, the effect was eliminated using a simple conventional encapsulation method. Our vacuum-based process thus demonstrates excellent potential for providing an alternative route to low-cost large-area organic electronics manufacturing.

AB - The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. The method allows a polymerized tripropyleneglycol diacrylate (TPGDA) insulator layer of thickness up to 1 μm to be obtained in a single pass by ultrahigh flash evaporation of a monomer onto a web travelling at 10 m·min-1and subsequent irradiation with an argon plasma emitted from a dc-sputtering cathode. The resulting organic thin-film transistors (OTFTs) exhibited field-effect mobility of 0.12 cm2 V-1·s-1, a threshold voltage of -21 V, a turn-on voltage of -2 V, and an on/off current ratio of 1 × 105. The effect of ambient air moisture on the device characteristics was investigated, showing that moisture has a reversible effect on the performance of the OTFTs exhibiting a shift in the turn-on voltage and deterioration in the on-off ratio. However, the effect was eliminated using a simple conventional encapsulation method. Our vacuum-based process thus demonstrates excellent potential for providing an alternative route to low-cost large-area organic electronics manufacturing.

U2 - 10.1109/LED.2012.2234434

DO - 10.1109/LED.2012.2234434

M3 - Article

VL - 34

SP - 268

EP - 270

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

ER -