Porth Ymchwil

Intermodulation distortion in MEMS capacitive switches under high RF power

Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

StandardStandard

Intermodulation distortion in MEMS capacitive switches under high RF power. / Molinero, D.; Luo, X.; Ning, Y. et al.
2013. 1-3 Papur a gyflwynwyd yn IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013.

Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

HarvardHarvard

Molinero, D, Luo, X, Ning, Y, Palego, C, Hwang, J & Goldsmith, CL 2013, 'Intermodulation distortion in MEMS capacitive switches under high RF power', Papur a gyflwynwyd yn IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013, 3/01/01 tt. 1-3. https://doi.org/10.1109/MWSYM.2013.6697357

APA

Molinero, D., Luo, X., Ning, Y., Palego, C., Hwang, J., & Goldsmith, C. L. (2013). Intermodulation distortion in MEMS capacitive switches under high RF power. 1-3. Papur a gyflwynwyd yn IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013. https://doi.org/10.1109/MWSYM.2013.6697357

CBE

Molinero D, Luo X, Ning Y, Palego C, Hwang J, Goldsmith CL. 2013. Intermodulation distortion in MEMS capacitive switches under high RF power. Papur a gyflwynwyd yn IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013. https://doi.org/10.1109/MWSYM.2013.6697357

MLA

Molinero, D. et al. Intermodulation distortion in MEMS capacitive switches under high RF power. IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013, 03 Ion 0001, Papur, 2013. https://doi.org/10.1109/MWSYM.2013.6697357

VancouverVancouver

Molinero D, Luo X, Ning Y, Palego C, Hwang J, Goldsmith CL. Intermodulation distortion in MEMS capacitive switches under high RF power. 2013. Papur a gyflwynwyd yn IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013. doi: 10.1109/MWSYM.2013.6697357

Author

Molinero, D. ; Luo, X. ; Ning, Y. et al. / Intermodulation distortion in MEMS capacitive switches under high RF power. Papur a gyflwynwyd yn IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013.

RIS

TY - CONF

T1 - Intermodulation distortion in MEMS capacitive switches under high RF power

AU - Molinero, D.

AU - Luo, X.

AU - Ning, Y.

AU - Palego, C.

AU - Hwang, J.

AU - Goldsmith, C.L.

PY - 2013/6/2

Y1 - 2013/6/2

N2 - ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.

AB - ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.

U2 - 10.1109/MWSYM.2013.6697357

DO - 10.1109/MWSYM.2013.6697357

M3 - Paper

SP - 1

EP - 3

T2 - IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013

Y2 - 3 January 0001

ER -