Intermodulation distortion in MEMS capacitive switches under high RF power
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
Fersiynau electronig
Dangosydd eitem ddigidol (DOI)
ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.
| Iaith wreiddiol | Saesneg |
|---|---|
| Tudalennau | 1-3 |
| Dynodwyr Gwrthrych Digidol (DOIs) | |
| Statws | Cyhoeddwyd - 2 Meh 2013 |
| Digwyddiad | IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013 - Hyd: 3 Ion 0001 → … |
Cynhadledd
| Cynhadledd | IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013 |
|---|---|
| Cyfnod | 3/01/01 → … |