The electrical behavior of an organic memory device based on a pentacene thin film metal-insulator-semiconductor (MIS) and transistor structures incorporating a layer of thermally evaporated metallic floating gate is demonstrated. The devices have been realised using thermally evaporated pentacene (semiconductor) and spin-coated polymethylmethacrylate (PMMA) (insulator). The drain and source electrodes have been fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm evaporated aluminium on a clean glass substrate. The devices containing the floating gate exhibited clear hysteresis in their electrical characteristics (output and transfer characteristics for transistors and also capacitance-voltage (C-V) characteristics of MIS structures). Under an appropriate gate bias (2s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses of as low as 1 V resulted in a clear write and erase states. The hysteresis in C-V characteristics and shifts in the threshold voltage of the transfer characteristics were attributed to the charging and discharging of the floating gate. The detailed programming and erasing procedures are reported.