Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. / Sleiman, A.; Sayers, P.W.; Mabrook, M.F.
Yn: Journal of Applied Physics, Cyfrol 113, Rhif 16, 01.04.2013, t. 164506 - 164506-5.
Yn: Journal of Applied Physics, Cyfrol 113, Rhif 16, 01.04.2013, t. 164506 - 164506-5.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
HarvardHarvard
Sleiman, A, Sayers, PW & Mabrook, MF 2013, 'Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures', Journal of Applied Physics, cyfrol. 113, rhif 16, tt. 164506 - 164506-5. https://doi.org/10.1063/1.4803062
APA
Sleiman, A., Sayers, P. W., & Mabrook, M. F. (2013). Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. Journal of Applied Physics, 113(16), 164506 - 164506-5. https://doi.org/10.1063/1.4803062
CBE
Sleiman A, Sayers PW, Mabrook MF. 2013. Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. Journal of Applied Physics. 113(16):164506 - 164506-5. https://doi.org/10.1063/1.4803062
MLA
Sleiman, A., P.W. Sayers, a M.F. Mabrook. "Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures". Journal of Applied Physics. 2013, 113(16). 164506 - 164506-5. https://doi.org/10.1063/1.4803062
VancouverVancouver
Sleiman A, Sayers PW, Mabrook MF. Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. Journal of Applied Physics. 2013 Ebr 1;113(16):164506 - 164506-5. doi: 10.1063/1.4803062
Author
RIS
TY - JOUR
T1 - Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
AU - Sleiman, A.
AU - Sayers, P.W.
AU - Mabrook, M.F.
PY - 2013/4/1
Y1 - 2013/4/1
U2 - 10.1063/1.4803062
DO - 10.1063/1.4803062
M3 - Article
VL - 113
SP - 164506 - 164506-5
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 16
ER -