Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
Research output: Contribution to journal › Article › peer-review
Standard Standard
Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. / Sleiman, A.; Sayers, P.W.; Mabrook, M.F.
In: Journal of Applied Physics, Vol. 113, No. 16, 01.04.2013, p. 164506 - 164506-5.
In: Journal of Applied Physics, Vol. 113, No. 16, 01.04.2013, p. 164506 - 164506-5.
Research output: Contribution to journal › Article › peer-review
HarvardHarvard
Sleiman, A, Sayers, PW & Mabrook, MF 2013, 'Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures', Journal of Applied Physics, vol. 113, no. 16, pp. 164506 - 164506-5. https://doi.org/10.1063/1.4803062
APA
Sleiman, A., Sayers, P. W., & Mabrook, M. F. (2013). Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. Journal of Applied Physics, 113(16), 164506 - 164506-5. https://doi.org/10.1063/1.4803062
CBE
Sleiman A, Sayers PW, Mabrook MF. 2013. Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. Journal of Applied Physics. 113(16):164506 - 164506-5. https://doi.org/10.1063/1.4803062
MLA
Sleiman, A., P.W. Sayers, and M.F. Mabrook. "Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures". Journal of Applied Physics. 2013, 113(16). 164506 - 164506-5. https://doi.org/10.1063/1.4803062
VancouverVancouver
Sleiman A, Sayers PW, Mabrook MF. Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. Journal of Applied Physics. 2013 Apr 1;113(16):164506 - 164506-5. doi: 10.1063/1.4803062
Author
RIS
TY - JOUR
T1 - Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
AU - Sleiman, A.
AU - Sayers, P.W.
AU - Mabrook, M.F.
PY - 2013/4/1
Y1 - 2013/4/1
U2 - 10.1063/1.4803062
DO - 10.1063/1.4803062
M3 - Article
VL - 113
SP - 164506 - 164506-5
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 16
ER -