Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
Iaith wreiddiol | Saesneg |
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Statws | Cyhoeddwyd - 1 Ebr 2003 |
Digwyddiad | Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK - Hyd: 3 Ion 0001 → … |
Cynhadledd
Cynhadledd | Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK |
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Cyfnod | 3/01/01 → … |