Porth Ymchwil

Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias

Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

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Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. / Mitchell, C.J.; Sly, J.L.; Missous, M. et al.
2003. Papur a gyflwynwyd yn Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

HarvardHarvard

Mitchell, CJ, Sly, JL, Missous, M, Banerjee, S & Shore, KA 2003, 'Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias', Papur a gyflwynwyd yn Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK, 3/01/01.

APA

Mitchell, C. J., Sly, J. L., Missous, M., Banerjee, S., & Shore, K. A. (2003). Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Papur a gyflwynwyd yn Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

CBE

Mitchell CJ, Sly JL, Missous M, Banerjee S, Shore KA. 2003. Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Papur a gyflwynwyd yn Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

MLA

Mitchell, C.J. et al. Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK, 03 Ion 0001, Papur, 2003.

VancouverVancouver

Mitchell CJ, Sly JL, Missous M, Banerjee S, Shore KA. Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. 2003. Papur a gyflwynwyd yn Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

Author

Mitchell, C.J. ; Sly, J.L. ; Missous, M. et al. / Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias. Papur a gyflwynwyd yn Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK.

RIS

TY - CONF

T1 - Observation of strong CW room temperature and low temperature emission (1.56 um at 4K) in highly strained InGaAs/InAlAs QC structures operating under reverse operational bias

AU - Mitchell, C.J.

AU - Sly, J.L.

AU - Missous, M.

AU - Banerjee, S.

AU - Shore, K.A.

PY - 2003/4/1

Y1 - 2003/4/1

M3 - Paper

T2 - Semiconductor and Integrated Optoelectronics 03, Cardiff, Wales, UK

Y2 - 3 January 0001

ER -