Organic electronic memory based on a ferroelectric polymer
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
Fersiynau electronig
Dangosydd eitem ddigidol (DOI)
Measurements of the capacitance of metal-insulator-semiconductor capacitors and the output characteristics of thin film transistors based on poly(3-hexylthiophene) as the active semiconductor and poly(vinylidenefluoride-trifluoroethylene) as the gate insulator show that ferroelectric polarisation in the insulator is stable but that its effect when poled by depletion voltages is partially neutralised by trapping of electrons at or near the semiconductor interface. Nevertheless, the combination of materials is capable of providing an adequate memory function.
| Iaith wreiddiol | Saesneg |
|---|---|
| Tudalennau (o-i) | 012055 |
| Cyfnodolyn | Journal of Physics: Conference Series |
| Cyfrol | 301 |
| Rhif y cyfnodolyn | 1 |
| Dynodwyr Gwrthrych Digidol (DOIs) | |
| Statws | Cyhoeddwyd - 26 Ebr 2013 |