Organic electronic memory based on a ferroelectric polymer
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DOI
Measurements of the capacitance of metal-insulator-semiconductor capacitors and the output characteristics of thin film transistors based on poly(3-hexylthiophene) as the active semiconductor and poly(vinylidenefluoride-trifluoroethylene) as the gate insulator show that ferroelectric polarisation in the insulator is stable but that its effect when poled by depletion voltages is partially neutralised by trapping of electrons at or near the semiconductor interface. Nevertheless, the combination of materials is capable of providing an adequate memory function.
| Original language | English |
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| Pages (from-to) | 012055 |
| Journal | Journal of Physics: Conference Series |
| Volume | 301 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 26 Apr 2013 |