Porth Ymchwil

Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

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Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor. / Taylor, D.M.; Devynck, M.; Rostirolla, B. et al.
Yn: Applied Physics Letters, Cyfrol 105, Rhif 18, 04.11.2014, t. article 183301.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Taylor, DM, Devynck, M, Rostirolla, B & Watson, CP 2014, 'Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor', Applied Physics Letters, cyfrol. 105, rhif 18, tt. article 183301. https://doi.org/10.1063/1.4901099

APA

Taylor, D. M., Devynck, M., Rostirolla, B., & Watson, C. P. (2014). Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor. Applied Physics Letters, 105(18), article 183301. https://doi.org/10.1063/1.4901099

CBE

Taylor DM, Devynck M, Rostirolla B, Watson CP. 2014. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor. Applied Physics Letters. 105(18):article 183301. https://doi.org/10.1063/1.4901099

MLA

Taylor, D.M. et al. "Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor". Applied Physics Letters. 2014, 105(18). article 183301. https://doi.org/10.1063/1.4901099

VancouverVancouver

Taylor DM, Devynck M, Rostirolla B, Watson CP. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor. Applied Physics Letters. 2014 Tach 4;105(18):article 183301. doi: 10.1063/1.4901099

Author

Taylor, D.M. ; Devynck, M. ; Rostirolla, B. et al. / Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor. Yn: Applied Physics Letters. 2014 ; Cyfrol 105, Rhif 18. tt. article 183301.

RIS

TY - JOUR

T1 - Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor

AU - Taylor, D.M.

AU - Devynck, M.

AU - Rostirolla, B.

AU - Watson, C.P.

PY - 2014/11/4

Y1 - 2014/11/4

N2 - Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

AB - Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

U2 - 10.1063/1.4901099

DO - 10.1063/1.4901099

M3 - Article

VL - 105

SP - article 183301

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -