Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor
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In: Applied Physics Letters, Vol. 105, No. 18, 04.11.2014, p. article 183301.
Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor
AU - Taylor, D.M.
AU - Devynck, M.
AU - Rostirolla, B.
AU - Watson, C.P.
PY - 2014/11/4
Y1 - 2014/11/4
N2 - Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.
AB - Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.
U2 - 10.1063/1.4901099
DO - 10.1063/1.4901099
M3 - Article
VL - 105
SP - article 183301
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
ER -